Highly reliable gate oxidation using catalytic water vapor generator (WVG) for MOS device fabrication-Reference-Cited by-同舟云学术

Highly reliable gate oxidation using catalytic water vapor generator (WVG) for MOS device fabrication

Published:2002-02 Issue:1-2 Volume:405 Page:290-299
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ohkawa Takeshi,Nakamura Osamu,Aharoni Herzl,Ohmi Tadahiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference12 articles.

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