Modelling of write/erase and charge retention characteristics of floating gate EEPROM devices-Reference-Cited by-同舟云学术

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Modelling of write/erase and charge retention characteristics of floating gate EEPROM devices

Published:1984-10 Issue:10 Volume:27 Page:899-906
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Bhattacharyya Anjan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Fowler‐Nordheim Tunneling into Thermally Grown SiO2

2. Int. Electron Dev. Meeting, Technical Digest;Sucin,1982

3. Int. Reliability Phys. Symp. IEEE Proc.;Euzent,1981

4. Int. Electron Dev. Meeting, Technical Digest;Liang,1982

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