Significant reduction of interface trap density of SiC PMOSFETs by post-oxidation H2O annealing processes with different oxygen partial pressures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab8e1f/pdf
Reference37 articles.
1. Status and prospects for SiC power MOSFETs
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3. High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers
4. Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature
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1. Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs;Japanese Journal of Applied Physics;2023-11-01
2. The effects of stress on interfacial properties and flatband voltage instability of 4H-SiC MOS structures;Microelectronics Reliability;2023-08
3. Characterization of deep traps in the near-interface oxide of widegap metal–oxide–semiconductor interfaces revealed by light irradiation and temperature change;Japanese Journal of Applied Physics;2022-04-28
4. Body doping dependence of field-effect mobility in both n- and p-channel 4H-SiC metal-oxide-semiconductor field-effect transistors with nitrided gate oxides;Applied Physics Express;2022-02-16
5. Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation;Applied Physics Express;2021-08-24
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