Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation
Author:
Funder
Adaptable and Seamless Technology Transfer Program through Target-Driven R and D
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ac1c43/pdf
Reference39 articles.
1. Digital CMOS IC's in 6H-SiC operating on a 5-V power supply
2. A silicon carbide CMOS intelligent gate driver circuit with stable operation over a wide temperature range
3. Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide
4. Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices
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1. High Mobility 4H-SiC P-MOSFET via Ultrathin ALD B<sub>2</sub>O<sub>3</sub> Interlayer between SiC and SiO<sub>2</sub>;Solid State Phenomena;2024-08-22
2. Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface;APL Materials;2023-11-01
3. Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs;Japanese Journal of Applied Physics;2023-11-01
4. Emerging SiC Applications beyond Power Electronic Devices;Micromachines;2023-06-06
5. 4H-SiC integrated circuits for high-temperature applications;Journal of Crystal Growth;2023-03
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