Silicon carbide: A unique platform for metal-oxide-semiconductor physics-Reference-Cited by-同舟云学术

Silicon carbide: A unique platform for metal-oxide-semiconductor physics

Published:2015-06 Issue:2 Volume:2 Page:021307
ISSN:1931-9401
Container-title:Applied Physics Reviews
language:en
Short-container-title:Applied Physics Reviews

Author:

Liu Gang¹^ORCID,Tuttle Blair R.²,Dhar Sarit³

Affiliation:

1. Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854, USA

2. Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA

3. Department of Physics, Auburn University, Auburn, Alabama 36849, USA

Funder

II-VI Foundation

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922748

Reference128 articles.

1. Fundamentals of Silicon Carbide Technology

2. W. L. Pribble , J. W. Palmour , S. T. Sheppard , R. P. Smith , S. T. Allen , T. J. Smith , Z. Ring , J. J. Sumakeris , A. W. Saxler , and J. W. Milligan , inIEEE MTT-SInternational Microwave Symposium Digest(2002), Vol. 1813, pp. 1819–1822.

3. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

4. Future high temperature applications for SiC integrated circuits

5. Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range

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