Preparation of SiO2@MnO2 composite abrasives and their performance in chemical-mechanical polishing of SiC substrates-Reference-Cited by-同舟云学术

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Preparation of SiO2@MnO2 composite abrasives and their performance in chemical-mechanical polishing of SiC substrates

Published:2024-10 Issue:19 Volume:50 Page:34796-34805
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Yang Ruixing,Lei Hong^ORCID,Zhang Jianhua^ORCID

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference54 articles.

1. Review of silicon carbide power devices and their applications;She;IEEE Trans. Ind. Electron.,2017

2. 3C-SiC Heteroepitaxial growth on silicon: the quest for Holy Grail;Ferro;Crit. Rev. Solid State Mater. Sci.,2014

3. Dhar Silicon carbide: a unique platform for metal-oxide-semiconductor physics;Liu;Appl. Phys. Rev.,2015

4. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Jpn. J. Appl. Phys.,2015

5. A review on Precision polishing technology of single-crystal SiC;Ma;Crystals,2022

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machining performance and material removal mechanism of sapphire with novel polishing slurry;Applied Surface Science;2024-10

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