Future high temperature applications for SiC integrated circuits
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High Mobility 4H-SiC P-MOSFET via Ultrathin ALD B<sub>2</sub>O<sub>3</sub> Interlayer between SiC and SiO<sub>2</sub>;Solid State Phenomena;2024-08-22
2. Optimizing the chemical vapor deposition process of 4H–SiC epitaxial layer growth with machine-learning-assisted multiphysics simulations;Case Studies in Thermal Engineering;2024-07
3. High voltage response of graphene/4H-SiC UV photodetector with low level detection;Journal of Alloys and Compounds;2023-12
4. Analysis of SiC NPN Ultraviolet Phototransistor Under Ultrahigh Temperature;IEEE Transactions on Electron Devices;2023-05
5. High-performance 4H-SiC Schottky UV Photodiodes by 1000 °C RTP for High-temperature Ultraviolet detection;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25
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