Optimizing the chemical vapor deposition process of 4H–SiC epitaxial layer growth with machine-learning-assisted multiphysics simulations-Reference-Cited by-同舟云学术

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Optimizing the chemical vapor deposition process of 4H–SiC epitaxial layer growth with machine-learning-assisted multiphysics simulations

Published:2024-07 Issue: Volume:59 Page:104507
ISSN:2214-157X
Container-title:Case Studies in Thermal Engineering
language:en
Short-container-title:Case Studies in Thermal Engineering

Author:

Tang Zhuorui,Zhao Shibo,Li Jian,Zuo Yuanhui,Tian Jing,Tang Hongyu^ORCID,Fan Jiajie,Zhang Guoqi

Publisher

Elsevier BV

Reference35 articles.

1. Benefits and advantages of using SiC;La Mantia,2019

2. Future high temperature applications for SiC integrated circuits;Zetterling;Phys. Status Solidi C,2012

3. Power-switching applications beyond silicon: status and future prospects of SiC and GaN devices;Dimitrijev;MRS Bull.,2015

4. Growth optimization and applicability of thick on-axis SiC layers using sublimation epitaxy in vacuum;Jokubavicius;J. Cryst. Growth,2016

5. SiC/Si heteroepitaxial growth;Kitabatake;Thin Solid Films,2000

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor;Coatings;2024-07-20

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