Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices-Reference-Cited by-同舟云学术

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Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

Published:2015-05 Issue:5 Volume:40 Page:399-405
ISSN:0883-7694
Container-title:MRS Bulletin
language:en
Short-container-title:MRS Bull.

Author:

Dimitrijev Sima,Han Jisheng,Moghadam Hamid Amini,Aminbeidokhti Amirhossein

Abstract

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science

Reference47 articles.

1. Merits of gallium nitride based power conversion

2. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

3. Nitrogen passivation of deposited oxides on n 4H–SiC

4. Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique

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1. Optimizing the chemical vapor deposition process of 4H–SiC epitaxial layer growth with machine-learning-assisted multiphysics simulations;Case Studies in Thermal Engineering;2024-07

2. P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor With a Threshold Voltage of 6 V;IEEE Electron Device Letters;2024-06

3. Analysis of Abnormal C–V Hump on Si₃N₄ MIS-HEMT With Mesa Isolation Under Negative Gate Bias Stress;IEEE Transactions on Electron Devices;2024-04

4. Comparison of Electrical Characteristics Between SiC and Si Substrate;2024 International Conference on Electronics, Information, and Communication (ICEIC);2024-01-28

5. Optimizing the Chemical Vapor Deposition Process of 4h-Sic Epitaxial Layer Growth with Machine-Learning-Assisted Multiphysics Simulations;2024

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