Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices-Reference-Cited by-同舟云学术

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Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices

Published:2015-11 Issue: Volume:221 Page:28-32
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Beltrán A.M.,Duguay S.,Strenger C.,Bauer A.J.,Cristiano F.,Schamm-Chardon S.

Funder

French-German Consortium MobiSiC and supported by the Programme Inter Carnot Fraunhofer (PICF)

METSA

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference17 articles.

1. Some Critical Materials and Processing Issues in SiC Power Devices

2. Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

3. High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy

4. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

5. Transition layers at the SiO2∕SiC interface

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001);ACS Applied Electronic Materials;2023-06-22

2. Enhancement of acidic-basic properties of silica by modification with CeO2-Fe2O3 nanoparticles via successive ionic layer deposition;Applied Surface Science;2019-04

3. Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography;Journal of Applied Physics;2016-05-14

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