Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2335967
Reference23 articles.
1. Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC
2. Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
3. Correlation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors
4. Shallow states at SiO2/4H-SiC interface on (112̄0) and (0001) faces
5. Electron scattering by ionized impurities in semiconductors
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