Shallow states at SiO2/4H-SiC interface on (112̄0) and (0001) faces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1492313
Reference23 articles.
1. Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices
2. Shallow electron traps at the 4H–SiC/SiO2 interface
3. Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
4. 2.6 kV 4H-SiC lateral DMOSFETs
5. Characterization and performance comparison of the power DIMOS structure fabricated with a reduced thermal budget in 4H and 6H-SiC
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3. Study of Vertical Capacitance in an n-Type 4H-SiC Stepped Thick-Oxide Trench MOS Structure;IEEE Transactions on Electron Devices;2022-08
4. TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs;IEEE Transactions on Electron Devices;2022-06
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