Oxygen atom ordering on SiO2/4H-SiC {0001} polar interfaces formed by wet oxidation-Reference-Cited by-同舟云学术

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Oxygen atom ordering on SiO2/4H-SiC {0001} polar interfaces formed by wet oxidation

Published:2021-12 Issue: Volume:221 Page:117360
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Saito Mitsuhiro^ORCID,Li Hongping,Inoue Kazutoshi^ORCID,Matsuhata Hirofumi,Ikuhara Yuichi

Funder

Precursory Research for Embryonic Science and Technology

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science and Technology

Japan Science and Technology Agency

China Postdoctoral Science Foundation

University of Tokyo

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Step-controlled epitaxial growth of SiC: high quality homoepitaxy;Matsunami;Mater. Sci. Eng. R Rep.,1997

2. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Jpn. J. Appl. Phys.,2015

3. Shallow states at SiO2/4H-SiC interface on (110) and (0001) faces;Yano;Appl. Phys. Lett.,2002

4. Chemically sensitive structure-imaging with a scanning transmission electron microscope;Pennycook;Nature,1988

5. Dynamics of annular bright field imaging in scanning transmission electron microscopy;Findlay;Ultramicroscopy,2010

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1. Synthesis of Ultrahigh-Purity (6,5) Carbon Nanotubes Using a Trimetallic Catalyst;ACS Nano;2024-08-20

2. Adhesion and electronic properties of 4H-SiC/α-Al2O3 interfaces with different terminations calculated via first-principles methods;Surfaces and Interfaces;2023-10

3. Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres;Materials;2023-06-14

4. Unexpected Realization of N-Polar AlN Films on Si-Face 4H–SiC Substrates Using RF Sputtering and High-Temperature Annealing;Crystal Growth & Design;2023-03-22

5. The initial oxidation of the 4H-SiC (0001) surface with C-related point defects: Insight by first-principles calculations;Applied Surface Science;2023-03

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