Advances in Inversion Channel Mobility Model for 4H-SiC MOS Devices
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-023-02609-x.pdf
Reference66 articles.
1. Ishigaki T, Hayakawa S, Murata T, Masuda T, Oda T, Takayanagi Y (2020) Diode-less SiC power module with countermeasures against bipolar degradation to achieve ultrahigh power density. IEEE Trans Electron Device 67:2035–2043
2. Tominaga T, Iwamatsu T, Nakao Y, Amishiro H, Watanabe H, Tomohisa S, Miura N, Nakata S (2022) Body potential control via p-type contact resistance and its influence on switching characteristics of 4H-SiC MOSFETs. IEEE Trans Electron Device 69:85–290
3. Singh S, Chaudhary T, Khanna G (2022) Recent advancements in wide band semiconductors (SiC and GaN) technology for future devices. Silicon 14:5793–5800
4. Papanasam E, Prashanth KB, Chanthini B, Manikandan E, Lucky A (2022) A comprehensive review of recent progress, prospect and challenges of silicon carbide and its applications. Silicon 14:12887–12900
5. Sung W, Brunt EV, Baliga BJ, Huang AQ (2011) A new edge termination technique for high-voltage devices in 4H-SiC-multiple-floating-zone junction termination extension. IEEE Electron Device Lett 32(7):880–882
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