Correlation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1513210
Reference17 articles.
1. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype
2. Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices
3. Shallow electron traps at the 4H–SiC/SiO2 interface
4. Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
5. Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions
Cited by 50 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation on the Degradation Mechanism of Si/SiC Cascode Device Under Repetitive Short-Circuit Tests;IEEE Open Journal of Power Electronics;2024
2. Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate;Nanomaterials;2023-05-06
3. Research on Interface Properties of Thermally Grown SiO2 and ALD SiO2 Stacked Structures;ECS Journal of Solid State Science and Technology;2023-05-01
4. Research on performance and application efficiency of GaN SiC Cascode devices;2022 IEEE 5th International Electrical and Energy Conference (CIEEC);2022-05-27
5. Electrical Properties of Optically Triggered SiC JFET for Power Electronic Application;2021 IEEE 12th International Symposium on Power Electronics for Distributed Generation Systems (PEDG);2021-06-28
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3