Correlation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1513210
Reference17 articles.
1. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype
2. Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices
3. Shallow electron traps at the 4H–SiC/SiO2 interface
4. Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
5. Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions
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