Investigation on the Degradation Mechanism of Si/SiC Cascode Device Under Repetitive Short-Circuit Tests-Reference-Cited by-同舟云学术

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Investigation on the Degradation Mechanism of Si/SiC Cascode Device Under Repetitive Short-Circuit Tests

Published:2024 Issue: Volume:5 Page:369-380
ISSN:2644-1314
Container-title:IEEE Open Journal of Power Electronics
language:
Short-container-title:IEEE Open J. Power Electron.

Author:

Zhang Qiusheng¹^ORCID,Liu Hangzhi¹^ORCID,Zhou Yuming¹^ORCID

Affiliation:

1. Anhui University Key Laboratory for Power Electronics and Motion Control, Anhui University of Technology, Maanshan, China

Funder

Natural Science Foundation

Colleges and Universities in Anhui

Natural Science Foundation of Anhui Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/8782709/10366862/10449481.pdf?arnumber=10449481

Reference40 articles.

1. SiC power-switching devices-the second electronics revolution?

2. Silicon carbide benefits and advantages for power electronics circuits and systems

3. A Survey of Wide Bandgap Power Semiconductor Devices

4. D$v$/D$t$-Control Methods for the SiC JFET/Si MOSFET Cascode

5. Power-Loss Prediction of High-Voltage SiC-mosfet Circuits With Compact Model Including Carrier-Trap Influences

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