Dependence of the Spill Back Effect on the Energy Level Distribution of Interface States Under the Transfer Gate in CMOS Image Sensor-Reference-Cited by-同舟云学术

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Dependence of the Spill Back Effect on the Energy Level Distribution of Interface States Under the Transfer Gate in CMOS Image Sensor

Published:2024-05-15 Issue:10 Volume:24 Page:16250-16260
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Zhao Pinyuan¹^ORCID,Liu Changju²,Zhang Yu¹^ORCID,Lu Xi¹^ORCID,Li Bei³,Xu Jiangtao²^ORCID

Affiliation:

1. Institute of Carbon Neutrality and New Energy, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China

2. Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, School of Microelectronics, Tianjin University, Tianjin, China

3. Chongqing Optoelectronics Research Institute, Chongqing, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7361/10530892/10487818.pdf?arnumber=10487818

Reference25 articles.

1. Influence of Pixel Design on Charge Transfer Performances in CMOS Image Sensors

2. Charge transfer noise and lag in CMOS active pixel sensors;Fossum

3. Experimental Analysis of Lag Sources in Pinned Photodiodes

4. Effects of transfer gate spill back in low light high performances CMOS image sensors;Michelot

5. Analysis and Modeling of Spill Back Effect in High Illumination CMOS Image Sensors

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