Influence of Pixel Design on Charge Transfer Performances in CMOS Image Sensors-Reference-Cited by-同舟云学术

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Influence of Pixel Design on Charge Transfer Performances in CMOS Image Sensors

Published:2018-03 Issue:3 Volume:65 Page:1048-1055
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Rizzolo Serena^ORCID,Goiffon Vincent^ORCID,Estribeau Magali,Marcelot Olivier^ORCID,Martin-Gonthier Philippe,Magnan Pierre

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8299498/08260535.pdf?arnumber=8260535

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dependence of the Spill Back Effect on the Energy Level Distribution of Interface States Under the Transfer Gate in CMOS Image Sensor;IEEE Sensors Journal;2024-05-15

2. 质子辐照对CMOS图像传感器传输栅损伤效应的实验与分析;Acta Optica Sinica;2024

3. Incomplete charge transfer in CMOS image sensor caused by Si/SiO₂ interface states in the TG channel;Journal of Semiconductors;2023-11-01

4. Study on optimization of image lag process based on 4T CMOS image sensor;2023 IEEE 3rd International Conference on Information Technology, Big Data and Artificial Intelligence (ICIBA);2023-05-26

5. 4T Complementary Metal Oxide Semiconductor Image Sensor Charge Transfer Efficiency Optimization;Journal of Nanoelectronics and Optoelectronics;2023-04-01

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