Transition layers at the SiO2∕SiC interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2949081
Reference18 articles.
1. Power MOSFETs in 4H-SiC: Device Design and Technology
2. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
3. High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy
4. Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy
5. Electrical, structural, and chemical analysis of silicon carbide-based metal-oxide-semiconductor field-effect-transistors
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