Power MOSFETs in 4H-SiC: Device Design and Technology-Reference-Cited by-同舟云学术

Power MOSFETs in 4H-SiC: Device Design and Technology

Published:2004 Issue: Volume: Page:785-811
ISSN:1439-2674
Container-title:Silicon Carbide
language:
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Author:

Agarwal A.,Ryu S.-H.,Palmour J.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-18870-1_33

Reference35 articles.

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4. A.K. Agarwal, R.R. Siergiej, S. Seshadri, M.H. White, P.G. McMullin, A.A. Burk, L.B. Rowland, C.D. Brandt and R.H. Hopkins: ISPSD, (1996)

5. A.K. Agarwal, R.R. Siergiej, S. Seshadri, M.H. White, P.G. McMullin, A.A. Burk, L.B. Rowland, C.D. Brandt and R.H. Hopkins: Mat. Res. Soc. Symp. Proc. 423, 92 (1996)

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