Electrical, structural, and chemical analysis of silicon carbide-based metal-oxide-semiconductor field-effect-transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1737801
Reference21 articles.
1. Effect of interface states on electron transport in 4H-SiC inversion layers
2. Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices
3. Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC
4. High channel mobility in normally-off 4H-SiC buried channel MOSFETs
5. Nitridation of silicon-dioxide films grown on 6H silicon carbide
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