Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy-Reference-Cited by-同舟云学术

Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy

Published:2003-05 Issue:5 Volume:32 Page:464-469
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Chang K. -C.,Bentley J.,Porter L. M.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-003-0179-y.pdf

Reference18 articles.

1. L.A. Lipkin, M.K. Das, and J.W. Palmour, in Silicon Carbide—Materials, Processing and Devices, ed. A. Agarwal, M.S. Kowronski, J.A. Cooper, Jr., and E. Janzen (Warrendale, PA: Materials Research Society), H3.1.1 (2001).

2. M.K. Das, B.S. Um, and J.A. Cooper, Jr., Mater. Sci. Forum 338–342, 1069 (2000).

3. G. Pensl, M. Bassler, F. Ciobanu, V.V. Afanas’ev, H. Yano, T. Kimoto, and H. Matsunami, in Silicon Carbide—Materials, Processing and Devices, ed. A. Agarwal, M.S. Kowronski, J.A. Cooper, Jr., and E. Janzen (Warrendale, PA: Materials Research Society), H3.2.1 (2001).

4. S. Wang, M. Di Ventra, S.G. Kim, and S.T. Pantelides, Phys. Rev. Lett. 86, 5946 (2001).

5. L. A. Lipkin, D.B. Slater, Jr., and J.W. Palmour, U.S. patent 5,972,801 (1999).

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