Physical analysis of remained oxidation byproducts as the origins of lattice distortion at the surface of 4H-SiC by Fourier-transform infrared spectroscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab7fe9/pdf
Reference31 articles.
1. First-Principles Study on Interlayer States at the 4H-SiC/SiO2Interface and the Effect of Oxygen-Related Defects
2. Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy
3. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
4. Material science and device physics in SiC technology for high-voltage power devices
5. Identification of the Carbon Dangling Bond Center at the4H−SiC/SiO2Interface by an EPR Study in Oxidized Porous SiC
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1. Optimization of fenugreek seed mucilage extraction for the synthesis of a novel bio-nano composite for efficient removal of cadmium ions from aqueous environments;International Journal of Biological Macromolecules;2024-03
2. Relaxation of the Distorted Lattice of 4H-SiC (0001) Surface by Post-Oxidation Annealing;Solid State Phenomena;2023-07-28
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