Analysis of the electronic and chemical structure in boron and phosphorus passivated 4H-SiC/SiO2 interfaces using HRTEM and STEM-EELS-Reference-Cited by-同舟云学术

Analysis of the electronic and chemical structure in boron and phosphorus passivated 4H-SiC/SiO2 interfaces using HRTEM and STEM-EELS

Published:2018-11-05 Issue:19 Volume:113 Page:193503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Taillon Joshua A.¹^ORCID,Klingshirn Christopher J.¹,Jiao Chunkun²,Zheng Yongju²,Dhar Sarit²,Zheleva Tsvetanka S.³,Lelis Aivars J.³,Salamanca-Riba Lourdes G.¹

Affiliation:

1. Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA

2. Department of Physics, Auburn University, Auburn, Alabama 36849, USA

3. US Army Research Laboratory, Adelphi, Maryland 20783, USA

Funder

National Science Foundation

Army Research Laboratory

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5053595

Reference50 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

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4. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

5. Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy

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