Atomic-Scale Dynamics of the Formation and Dissolution of Carbon Clusters in SiO2
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.86.5946/fulltext
Reference17 articles.
1. Metal–oxide–semiconductor capacitors formed by oxidation of polycrystalline silicon on SiC
2. Atomic-Scale Mechanisms of Oxygen Precipitation and Thin-Film Oxidation of SiC
3. Oxygen stability, diffusion, and precipitation in SiC: Implications for thin-film oxidation
4. Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning
5. “Carbon cluster model” for electronic states at interfaces
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