Atomic-Scale Mechanisms of Oxygen Precipitation and Thin-Film Oxidation of SiC
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.83.1624/fulltext
Reference21 articles.
1. Metal–oxide–semiconductor capacitors formed by oxidation of polycrystalline silicon on SiC
2. Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface
3. Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC
4. Monolithic NMOS digital integrated circuits in 6H-SiC
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