Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations-Reference-Cited by-同舟云学术

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Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations

Published:2018-07-28 Issue:4 Volume:124 Page:045302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cottom J.¹^ORCID,Gruber G.²^ORCID,Pobegen G.³^ORCID,Aichinger T.⁴,Shluger A. L.¹^ORCID

Affiliation:

1. University College London–Department of Physics and Astronomy, Gower Street, London WC1E 6BT, United Kingdom

2. Institute of Solid State Physics–Graz University of Technology, Petersgasse 16, 8010 Graz, Austria

3. KAI GmbH, Europastraße 8, 9500 Villach, Austria

4. Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach, Austria

Funder

Leverhulme Trust

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5024608

Reference66 articles.

1. Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs

2. Silica on Silicon Carbide

3. Interfacial Defects in SiO2Revealed by Photon Stimulated Tunneling of Electrons

4. Bonding at theSiC−SiO2Interface and the Effects of Nitrogen and Hydrogen

5. Identification of positively charged carbon antisite-vacancy pairs in4H−SiC

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1. Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors;Journal of Applied Physics;2024-07-15

2. All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide;Physical Review Letters;2024-04-04

3. Enhancing photovoltaic performance of boron nitride quantum dots: A density functional theory study on carbon doping and amino functionalization;FlatChem;2024-03

4. Charge pumping electrically detected magnetic resonance of silicon carbide power transistors;Journal of Applied Physics;2023-08-03

5. Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps;Journal of Applied Physics;2023-07-19

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