Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs-Reference-Cited by-同舟云学术

Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs

Published:2018-01 Issue: Volume:80 Page:68-78
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Aichinger Thomas^ORCID,Rescher Gerald,Pobegen Gregor^ORCID

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference53 articles.

1. Ultra-low (1.25mΩ) on-resistance 900V SiC 62mm half-bridge power modules using new 10mΩ SiC MOSFETs;Casady,2016

2. SiC power-switching devices-the second electronics revolution?;Cooper;Proc. IEEE,2002

3. Demonstration of superior SiC MOSFET module performance within a Buck-Boost Conversion System, Proceedings of PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management;Slawinski,2016

4. Switching Performance of a 1200V SiC-Trench-MOSFET in a Low-Power Module, Proceedings of PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management;Heer,2016

5. Evolution of SiC Products for Industrial Application, Proceedings of PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management;Kizu,2016

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