Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect-Reference-Cited by-同舟云学术

Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

Published:2015-02-09 Issue:6 Volume:106 Page:062104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ortiz G.,Strenger C.,Uhnevionak V.,Burenkov A.,Bauer A. J.,Pichler P.,Cristiano F.,Bedel-Pereira E.,Mortet V.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4908123

Reference24 articles.

1. Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning

2. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype

3. Correlation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors

4. Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing

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