Impact of the NO Anneal on the Microscopic Structure and Chemical Composition of the Si-Face 4H-SiC/SiO2Interface-Reference-Cited by-同舟云学术

Impact of the NO Anneal on the Microscopic Structure and Chemical Composition of the Si-Face 4H-SiC/SiO2Interface

Published:2018-04-03 Issue:12 Volume:5 Page:1800022
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Gruber Gernot¹^ORCID,Gspan Christian²,Fisslthaler Evelin²,Dienstleder Martina²,Pobegen Gregor³^ORCID,Aichinger Thomas⁴^ORCID,Meszaros Robert⁴,Grogger Werner⁵,Hadley Peter¹

Affiliation:

1. Institute of Solid State Physics; Graz University of Technology; Petersgasse 16 8010 Graz Austria

2. Graz Centre for Electron Microscopy (ZFE); Austrian Cooperative Research (ACR); Steyrergasse 17 8010 Graz Austria

3. KAI GmbH; Europastraße 8 9524 Villach Austria

4. Infineon Technologies; Siemensstraße 2 9500 Villach Austria

5. Institute of Electron Microscopy and Nanoanalysis (FELMI); Graz University of Technology; Steyrergasse 17 8010 Graz Austria

Funder

Österreichische Forschungsförderungsgesellschaft

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Reference40 articles.

1. Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

2. Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review

3. Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress

4. Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs

5. Intrinsic SiC/SiO2 Interface States

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