DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1¯) metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1¯) metalorganic vapor phase epitaxy

Published:2017-10-02 Issue:14 Volume:111 Page:141602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kempisty Pawel¹²,Kangawa Yoshihiro¹³⁴^ORCID,Kusaba Akira⁴,Shiraishi Kenji¹,Krukowski Stanislaw²,Bockowski Michal¹²,Kakimoto Koichi³⁴,Amano Hiroshi¹

Affiliation:

1. Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan

2. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland

3. Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

4. Department of Aeronautics and Astronautics, Kyushu University, Nishi-ku, Fukuoka 819-0395, Japan

Funder

Narodowe Centrum Nauki (NCN)

Ministry of Education, Culture, Sports, Science and Technology (MEXT)

Horizon 2020 Framework Programme

Strategic International Collaborative Research Program (SICORP)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference22 articles.

1. Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor

2. Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

3. SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN

4. Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

5. High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system

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