Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth – Ab initio studies-Reference-Cited by-同舟云学术

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Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth – Ab initio studies

Published:2023-10 Issue: Volume:230 Page:112489
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Kempisty Pawel^ORCID,Ahmad Ashfaq,Strak Pawel^ORCID,Sakowski Konrad^ORCID,Kafar Anna^ORCID,Piechota Jacek^ORCID,Krukowski Stanislaw^ORCID

Funder

Narodowe Centrum Nauki

Interdyscyplinarne Centrum Modelowania Matematycznego i Komputerowego UW

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference51 articles.

1. J. Ou, W.-K. Chen, H.-C. Lin, Y.-C. Pan, M.-C. Lee, An Elucidation of Solid Incorporation of InGaN Grown by Metalorganic Vapor Phase Epitaxy, Jpn. J. Appl. Phys. 37 (1998) L633-L636.

2. Growth and characterization of In-based nitride compounds;Bedair;J. Cryst. Growth,1997

3. Growth and characterization of bulk InGaN films and quantum wells;Keller;Appl. Phys. Lett.,1996

4. Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition;Keller;J. Cryst. Growth,1997

5. Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD;Kim;J. Electron. Mater.,2001

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