Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor-Reference-Cited by-同舟云学术

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Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor

Published:2016-04-21 Issue:5S Volume:55 Page:05FE04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ikenaga Kazutada,Mishima Akira,Yano Yoshiki,Tabuchi Toshiya,Matsumoto Koh

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=5S/a=05FE04/pdf

Reference32 articles.

1. Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes

2. Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates

3. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

4. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

5. Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells

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1. Progress in efficient doping of Al-rich AlGaN;Journal of Semiconductors;2024-02-01

2. Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition;Vacuum;2023-11

3. High electron mobility in AlN:Si by point and extended defect management;Journal of Applied Physics;2022-11-14

4. A pathway to highly conducting Ge-doped AlGaN;Journal of Applied Physics;2021-11-28

5. On the Ge shallow-to-deep level transition in Al-rich AlGaN;Journal of Applied Physics;2021-08-07

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