Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1899760
Reference113 articles.
1. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
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3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
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