On the Ge shallow-to-deep level transition in Al-rich AlGaN-Reference-Cited by-同舟云学术

On the Ge shallow-to-deep level transition in Al-rich AlGaN

Published:2021-08-07 Issue:5 Volume:130 Page:055702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bagheri Pegah¹^ORCID,Reddy Pramod²^ORCID,Mita Seiji²,Szymanski Dennis¹^ORCID,Kim Ji Hyun¹^ORCID,Guan Yan¹,Khachariya Dolar³^ORCID,Klump Andrew¹^ORCID,Pavlidis Spyridon³^ORCID,Kirste Ronny²,Collazo Ramón¹,Sitar Zlatko¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

2. Adroit Materials, Cary, North Carolina 27518, USA

3. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911, USA

Funder

Air Force Office of Scientific Research

National Science Foundation

Army Research Office

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0059037

Reference62 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

3. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

4. Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN

5. Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

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