Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells-Reference-Cited by-同舟云学术

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Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

Published:2011-04-18 Issue:5 Volume:4 Page:052101
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Ban Kazuhito,Yamamoto Jun-ichi,Takeda Kenichiro,Ide Kimiyasu,Iwaya Motoaki,Takeuchi Tetsuya,Kamiyama Satoshi,Akasaki Isamu,Amano Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=5/a=052101/pdf

Reference16 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

4. Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm

5. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

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1. High performance deep-ultraviolet light-emitting diodes with transverse electron injection;Optics & Laser Technology;2024-10

2. Effect of the AlGaN Multi‐Quantum Well Growth Temperature on the Efficiency of Metal‐Organic Vapor‐Phase Epitaxy‐Grown Far‐Ultraviolet‐C Light‐Emitting Diodes Emitting near 235 nm;physica status solidi (a);2024-08-12

3. Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes;Advanced Electronic Materials;2024-07-19

4. Localized Surface Plasmonic Resonance of an Al Nanorod Array on High-Quality AlN Templates into the Far-UVC Spectral Region;ACS Applied Optical Materials;2024-07-05

5. Spatial correlation of defect-selective etching and dark luminescence spots in Al _x Ga_1−xN;Semiconductor Science and Technology;2024-06-06

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