Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes-Reference-Cited by-同舟云学术

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

Published:2010-06-11 Issue:6 Volume:3 Page:061004
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Pernot Cyril,Kim Myunghee,Fukahori Shinya,Inazu Tetsuhiko,Fujita Takehiko,Nagasawa Yosuke,Hirano Akira,Ippommatsu Masamichi,Iwaya Motoaki,Kamiyama Satoshi,Akasaki Isamu,Amano Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=6/a=061004/pdf

Reference13 articles.

1. III–Nitride UV Devices

2. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

3. Novel UV devices on high-quality AlGaN using grooved underlying layer

4. Deep ultraviolet light-emitting diodes

5. Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells

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