Novel UV devices on high-quality AlGaN using grooved underlying layer-Reference-Cited by-同舟云学术

Novel UV devices on high-quality AlGaN using grooved underlying layer

Published:2009-05 Issue:10 Volume:311 Page:2860-2863
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tsuzuki Hirotoshi,Mori Fumiaki,Takeda Kenichiro,Iwaya Motoaki,Kamiyama Satoshi,Amano Hiroshi,Akasaki Isamu,Yoshida Harumasa,Kuwabara Masakazu,Yamashita Yoji,Kan Hirofumi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate

2. 324 nm Light Emitting Diodes with Milliwatt Powers

3. AlGaN single-quantum-well light-emitting diodes with emission at 285 nm

4. AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition

5. 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficient and droop-free AlGaN-based UV-C LED using the inverted linearly graded active region and engineered hole source layer;Optik;2024-09

2. Synthesis, structural and luminescence properties of MgO, Mg2SiO4 and MgO/Mg2SiO4 nanostructures;Journal of the Ceramic Society of Japan;2024-04-01

3. High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization;Optics Express;2023-08-14

4. Development of High‐Reflectivity and Antireflection Dielectric Multilayer Mirrors for AlGaN‐Based Ultraviolet‐B Laser Diodes and their Device Applications;physica status solidi (a);2023-06-19

5. Performance of Ultraviolet‐B Laser Diodes on AlGaN Templates Prepared Using Different Fabrication Methods;physica status solidi (a);2023-05-31