Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate-Reference-Cited by-同舟云学术

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Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate

Published:2002-03-15 Issue:Part 2, No. 3B Volume:41 Page:L320-L322
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chitnis Ashay,Adivarahan Vinod,Shatalov Maxim,Zhang Jianping,Gaevski Michael,Shuai Wu,Pachipulusu Radhika,Sun Jason,Simin Kirill,Simin Grigory,Yang Jinwei,Khan Muhammad Asif

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=3B/a=L320/pdf

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2. The emergence and prospects of deep-ultraviolet light-emitting diode technologies;Nature Photonics;2019-03-22

3. Enhancing Wall-Plug Efficiency for Deep-UV Light-Emitting Diodes: From Crystal Growth to Devices;Light-Emitting Diodes;2019

4. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission;Scientific Reports;2016-03

5. III-Nitride-Based Short-Wavelength Ultraviolet Light Sources;Reference Module in Materials Science and Materials Engineering;2016

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