Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=4/a=041001/pdf
Reference19 articles.
1. III–Nitride UV Devices
2. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
3. High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well
4. Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
5. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Grown on Epitaxial AlN/Sapphire Templates
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