High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1647273
Reference12 articles.
1. Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm
2. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
3. Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes on Si(111) and Sapphire
4. Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire
5. Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region
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