Investigating the Role of Embedded ZnO Seed Layer Thickness in Electrodeposited Cu2O/Zn(x)Mg(1−x)O/ZnO/FTO Heterojunctions for Photovoltaic Applications

Author:

Kara Rania1ORCID,Nazir Roshan23,Pandit Manzoor Ahmad45

Affiliation:

1. Department of Chemistry Ferhat Abbas‐Sétif 1 University Setif 19000 Algeria

2. Department of Chemistry Guru Nanak Institute of Technology Hyderabad Telangana 501506 India

3. Department of Chemistry Indian Institute of Technology Delhi New Delhi 110016 India

4. School of Chemistry University of Hyderabad Hyderabad 500046 India

5. Materials Genome Institute Shanghai University Shanghai 200444 China

Abstract

This article represents the construction of Cu2O/Zn(x)Mg(1−x)O/ZnO/FTO heterojunctions by employing a simple electrodeposition approach. The impact of inserting ZnO seed layers with different thicknesses on the various physicochemical properties of the electrodeposited films is explored by applying various techniques. The electrochemical characterization specifies high photoresponses achieving 335.42 μA cm−2 for seeded Cu2O/Zn(x)Mg(1−x)O heterojunctions by increasing the thickness of seeded ZnO layer from 25 to 100 nm. The scanning electron microscopy and atomic force microscopy techniques indicate that the surface texture and smoothness of Cu2O/ZnO heterojunctions have significantly enhanced after increasing the thickness of the ZnO layers. The synthesized ZnO nanostructures are found to be highly crystalline in nature having ZnO with hexagonal phase oriented along (002) direction and Cu2O with cubic structure oriented along (111) direction. This study shows the introduction of ZnO seed layers, enhances the IV characteristics of Au/Cu2O/Zn(x)Mg(1−x)O/ZnO/FTO solar cells. The ideality factor shows a decreasing tendency from 5.35 to 3.93 while the photoelectric response is increased from 427% to 643% with the increase of the ZnO thickness from 25 to 100 nm, respectively, demonstrating the effectiveness of the seed layers approach.

Publisher

Wiley

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