High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN-Reference-Cited by-同舟云学术

High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

Published:2008-04 Issue:7-9 Volume:310 Page:2326-2329
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nagamatsu Kentaro,Okada Narihito,Sugimura Hiroki,Tsuzuki Hirotoshi,Mori Fumiaki,Iida Kazuyoshi,Bando Akira,Iwaya Motoaki,Kamiyama Satoshi,Amano Hiroshi,Akasaki Isamu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. 324 nm Light Emitting Diodes with Milliwatt Powers

3. AlGaN Deep-Ultraviolet Light-Emitting Diodes

4. Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth

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