Wide and ultrawide-bandgap semiconductor surfaces: A full multiscale model-Reference-Cited by-同舟云学术

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Wide and ultrawide-bandgap semiconductor surfaces: A full multiscale model

Published:2024-10 Issue: Volume:670 Page:160558
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Thomas Giuliano^ORCID,Ferreyra Romualdo Alejandro^ORCID,Quiroga Matias A.^ORCID

Funder

CONICET

Publisher

Elsevier BV

Reference74 articles.

1. Vertical GaN power devices: Device principles and fabrication technologies—Part I;Fu;IEEE Trans. Electron Devices,2021

2. Vertical GaN power devices: Device principles and fabrication technologies—Part II;Fu;IEEE Trans. Electron Devices,2021

3. Recent progress of Ga2O3 power technology: Large-area devices, packaging and applications;Qin;Japan. J. Appl. Phys.,2023

4. Selective area doping of GaN towards high-power applications;Ferreyra;J. Phys. D: Appl. Phys.,2023

5. Incorporation of germanium for n-type doping of cubic GaN;Deppe;Phys. Status Solidi (B),2017

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