Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference84 articles.
1. Growth and applications of Group III-nitrides
2. Semiconductors and Semimetals, Metalorganic chemical vapor deposition (MOCVD) of Group III Nitrides;DenBaars,1998
3. Epitaxial growth of III–V nitride semiconductors by metalorganic chemical vapor deposition
4. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
5. Pendeoepitaxy of gallium nitride thin films
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