Hybrid density functional theory study on zinc blende GaN and diamond surfaces and interfaces: Effects of size, hydrogen passivation, and dipole corrections-Reference-Cited by-同舟云学术

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Hybrid density functional theory study on zinc blende GaN and diamond surfaces and interfaces: Effects of size, hydrogen passivation, and dipole corrections

Published:2022-03 Issue: Volume:30 Page:e00653
ISSN:2352-2143
Container-title:Computational Condensed Matter
language:en
Short-container-title:Computational Condensed Matter

Author:

Welch Eric^ORCID,Scolfaro Luisa

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Materials Science (miscellaneous),Electronic, Optical and Magnetic Materials

Reference71 articles.

1. Gallium nitride high electron mobility transistor (GaN-HEMT) technology for high gain and highly efficient power;Hoshi;Oki Tech. Rev.,2007

2. The early history of the high electron mobility transistor (HEMT);Mimura;IEEE Trans. Microw. Theor. Tech.,2002

3. Gallium Nitride (GaN) HEMT's: Progress and Potential for Commercial Applications;Shealy,2002

4. Multi-watt wideband MMICs in GaN and GaAs;Meharry;IEEE MTT-S Int. Microw. Symp. Dig.,2007

5. AlGaN/GaN HEMTs with PAE of 53%0 at 35 GHz for HPA and Multi-Function MMIC Applications;Kao,2007

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