Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Published:2016-09-08 Issue:10 Volume:120 Page:105701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Kaess Felix¹²,Mita Seiji³,Xie Jingqiao¹,Reddy Pramod¹^ORCID,Klump Andrew¹,Hernandez-Balderrama Luis H.¹,Washiyama Shun¹,Franke Alexander¹,Kirste Ronny³,Hoffmann Axel²,Collazo Ramón¹,Sitar Zlatko¹³

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

2. Solid State Physics Institute, Technical University Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

3. Adroit Materials, Inc., 991 Aviation Pkwy, Suite 800, Morrisville, North Carolina 27560, USA

Funder

National Science Foundation (NSF)

Army Research Office (ARO)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962017

Reference27 articles.

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3. K. S. Boutros , S. Chandrasekaran , W. B. Luo , and V. Mehrotra , in IEEE International Symposium on Power Semiconductor Devices ICs 2006 (ISPSD 2006) (2006), pp. 1–4.

4. Mobility Collapse in Undoped and Si-Doped GaN Grown by LP-MOVPE

5. Scattering of electrons at threading dislocations in GaN

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