Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor-Reference-Cited by-同舟云学术

Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor

Published:2024-08-05 Issue:6 Volume:125 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Sengupta Rohan¹^ORCID,Little Brian¹^ORCID,Mita Seiji²^ORCID,Markham Keith¹^ORCID,Dycus J. Houston³^ORCID,Stein Shane¹^ORCID,Wu Barry⁴^ORCID,Sitar Zlatko²⁵^ORCID,Kish Fred¹,Pavlidis Spyridon¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina State University 1 , Raleigh, North Carolina, USA

2. Adroit Materials, Inc 2 ., Apex, North Carolina, USA

3. Eurofins EAG Advanced Microscopy 3 , Raleigh, North Carolina, USA

4. Keysight Technologies 4 , Santa Rosa, California, USA

5. Department of Materials Science and Engineering, North Carolina State University 5 , Raleigh, North Carolina, USA

Abstract

III–V/III-nitride p–n junctions were realized via crystal heterogeneous integration, and the resulting diodes were characterized to analyze electrical behavior and junction quality. p-type In0.53Ga0.47As, which is a well-established base layer in InP heterojunction bipolar transistor (HBT) technology, was used in combination with a homoepitaxial n-type GaN. The latter offers low dislocation density, coupled with high critical electric field and saturation velocity, which are attractive for use in future HBT collector layers. Transmission electron microscopy confirms an abrupt interface in the fabricated heterogeneous diodes. Electrical characterization of the diodes reveals a near-unity ideality factor (n ∼ 1.07) up to 145 °C, a high rectification ratio of ∼108, and a low interface trap density of 3.7 × 1012 cm−2.

Funder

Microsystems Technology Office

National Science Foundation

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0194526/20094953/062102_1_5.0194526.pdf

Reference47 articles.

1. InP HBT technologies for THz integrated circuits;Proc. IEEE,2017

2. First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density;Appl. Phys. Express,2021

3. W-band power performance of SiN-passivated N-polar GaN deep recess HEMTs;IEEE Electron Device Lett.,2020

4. GaN HBT: Toward an RF device;IEEE Trans. Electron Devices,2001

5. Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor;Appl. Phys. Lett.,1999