Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates-Reference-Cited by-同舟云学术

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

Published:2010-07-16 Issue:8 Volume:3 Page:081001
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Saitoh Yu,Sumiyoshi Kazuhide,Okada Masaya,Horii Taku,Miyazaki Tomihito,Shiomi Hiromu,Ueno Masaki,Katayama Koji,Kiyama Makoto,Nakamura Takao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=8/a=081001/pdf

Reference13 articles.

1. High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substrates

2. High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

3. Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

4. Gallium vacancies and the yellow luminescence in GaN

5. Role of carbon in GaN

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