Mobility Collapse in Undoped and Si-Doped GaN Grown by LP-MOVPE-Reference-Cited by-同舟云学术

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Mobility Collapse in Undoped and Si-Doped GaN Grown by LP-MOVPE

Published:1999-11 Issue:1 Volume:216 Page:571-576
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Bougrioua Z.,Farvacque J.-L.,Moerman I.,Demeester P.,Harris J.J.,Lee K.,van Tendeloo G.,Lebedev O.,Thrush E.J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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